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High Thermal Conductivity Silicon Nitride Ceramic Substrates
Silicon nitride ceramic material, with special formula and process, each substrate is sintered at 2000°C, thermal conductivity>80W/(m*k), has passed the quality test of international head enterprises, the size is customized according to customer needs.
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Ceramic Substrates
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High Thermal Conductivity Silicon Nitride Ceramic Substrates
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Silicon nitride ceramic material, with special formula and process, each substrate is sintered at 2000°C, thermal conductivity>80W/(m*k), has passed the quality test of international head enterprises, the size is customized according to customer needs.
Product features: electrical insulation, high thermal conductivity, low dielectric loss, high strength, suitable for the third generation of semiconductor devices with high heat generation, such as IGBT, MOSFET, etc., to play a good heat dissipation and encapsulation effect.
Application areas include: new energy vehicles, hybrid vehicles, high-speed rail, motor drive modules, new energy charging piles and so on.
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High Thermal Conductivity Silicon Nitride Ceramic Substrates
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